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RELIABLESEMICONDUCTOR 6569cdac8a18ed310e5528a4 Products https://www.reliablesemiconductors.com
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• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V• Low gate charge ( typical 30 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
FQPF6N90CT
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AP04N70 Mosfet
AP04N70
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F4N65SE Mosfet
F4N65SE
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CS4N60 CS4N60
CS4N60
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RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0 AUltra Low gate charge (typical 45nC)Low reverse transfer capacitance (CRSS = typical 9 pF)Fast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness
02N65
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BUZ103SL Mosfet
BUZ103SL 
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N-Channel 55 V 20A (Tc) 55W (Tc) Through Hole PG-TO220-3-1
BUZ101SL 
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FEATURES• Dynamic dV/dt rating• Repetitive avalanche rated• Fast switching• Ease of paralleling• Simple drive requirements
IRF840
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
IRF640NPBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V
IRF630NPBF
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Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 33 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
IRF540NPBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 49 A Rds On - Drain-Source Resistance: 23 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
IRFZ44NPBF
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• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V• Low gate charge ( typical 30 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
View Details
FQPF6N90CT
AP04N70 Mosfet
View Details
AP04N70
F4N65SE Mosfet
View Details
F4N65SE
CS4N60 CS4N60
View Details
CS4N60
RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0 AUltra Low gate charge (typical 45nC)Low reverse transfer capacitance (CRSS = typical 9 pF)Fast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness
View Details
02N65
BUZ103SL Mosfet
View Details
BUZ103SL 
N-Channel 55 V 20A (Tc) 55W (Tc) Through Hole PG-TO220-3-1
View Details
BUZ101SL 
FEATURES• Dynamic dV/dt rating• Repetitive avalanche rated• Fast switching• Ease of paralleling• Simple drive requirements
View Details
IRF840
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 150 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
View Details
IRF640NPBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 9.3 A Rds On - Drain-Source Resistance: 300 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V
View Details
IRF630NPBF
Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 33 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
View Details
IRF540NPBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 49 A Rds On - Drain-Source Resistance: 23 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
View Details
IRFZ44NPBF

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