RELIABLESEMICONDUCTOR Products
Mumbai gaurav@reliablesemiconductors.com
919004223161
Chat with us  

Chat with us on WhatsApp

×
Preview

This is your website preview.

Currently it only shows your basic business info. Start adding relevant business details such as description, images and products or services to gain your customers attention by using Boost 360 android app / iOS App / web portal.

RELIABLESEMICONDUCTOR 6569cdac8a18ed310e5528a4 Products https://www.reliablesemiconductors.com
Home
products
Quote
Menu

Manufacturing test

Home Products

Our Products

Number of Channels1Voltage - Isolation3750VrmsCurrent Transfer Ratio (Min)50% @ 5mACurrent Transfer Ratio (Max)600% @ 5mA
EL357N(B)(TA)-G
VIEW DETAILS
Number of Channels1Voltage - Isolation3750VrmsCurrent Transfer Ratio (Min)200% @ 5mACurrent Transfer Ratio (Max)400% @ 5mA
EL357N(C)(TA)-G
VIEW DETAILS
EL817S1(C )(TU)-F Optocopler
EL817S1(C )(TU)-F
VIEW DETAILS
EL817S1(B )(TU)-F
EL817S1(B )(TU)-F
VIEW DETAILS
Number of Channels: 1 Channel Isolation Voltage: 5000 Vrms Output Type: NPN Phototransistor Current Transfer Ratio - Min: 20 % Current Transfer Ratio - Max: 300 % If - Forward Current: 20 mA Vf - Forward Voltage: 1.4 V Maximum Collector Emitter Voltage: 35 V
LTV-814S-TA1
VIEW DETAILS
Number of Channels: 1 Channel Output Type: Photodarlington Isolation Voltage: 3750 Vrms Vf - Forward Voltage: 1.4 V If - Forward Current: 1.6 mA Vr - Reverse Voltage: 5 V Pd - Power Dissipation: 135 mW
6N139-500E
VIEW DETAILS
• Choice of CMR performance of 15 kV/μs,5 kV/μs, and 1000 V/μs• High speed: 10 MBd typical• +5 V CMOS compatibility• Pure tin leads• Guaranteed AC and DC performance overtemperature• Meets IEC 60068-2-42 (SO2) and IEC 60068-2-43 (H2S)requirements• Low input current capability of 5 mA
6N137S
VIEW DETAILS
The 6N135 and 6N136 are optocouplers with a GaAIAsinfrared emitting diode, optically coupled with an integratedphoto detector which consists of a photo diode and ahigh speed transistor in a DIP-8 plastic package.Signals can be transmitted between two electricallyseparated circuits up to frequencies of 2 MHz. The potentialdifference between the circuits to be coupled should notexceed the maximum permissible reference voltages.
EL6N136S
VIEW DETAILS
Output Type: TriacVoltage – Off State: 400VZero Crossing Circuit: NoCurrent – LED Trigger (Ift) (Max): 15mACurrent – On State (It (RMS)) (Max): 100mAVoltage – Forward (Vf) (Typ): 1.18VCurrent – DC Forward (If) (Max): 60mAMounting Type: Through HoleOperating Temperature: -55 C ~ 100C
EL3023STA
VIEW DETAILS
8N60 Mosfet
8N60
VIEW DETAILS
7N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
7N80
VIEW DETAILS
WG7N65 Mosfet
WG7N65
VIEW DETAILS

Filter using tags

Number of Channels1Voltage - Isolation3750VrmsCurrent Transfer Ratio (Min)50% @ 5mACurrent Transfer Ratio (Max)600% @ 5mA
View Details
EL357N(B)(TA)-G
Number of Channels1Voltage - Isolation3750VrmsCurrent Transfer Ratio (Min)200% @ 5mACurrent Transfer Ratio (Max)400% @ 5mA
View Details
EL357N(C)(TA)-G
EL817S1(C )(TU)-F Optocopler
View Details
EL817S1(C )(TU)-F
EL817S1(B )(TU)-F
View Details
EL817S1(B )(TU)-F
Number of Channels: 1 Channel Isolation Voltage: 5000 Vrms Output Type: NPN Phototransistor Current Transfer Ratio - Min: 20 % Current Transfer Ratio - Max: 300 % If - Forward Current: 20 mA Vf - Forward Voltage: 1.4 V Maximum Collector Emitter Voltage: 35 V
View Details
LTV-814S-TA1
Number of Channels: 1 Channel Output Type: Photodarlington Isolation Voltage: 3750 Vrms Vf - Forward Voltage: 1.4 V If - Forward Current: 1.6 mA Vr - Reverse Voltage: 5 V Pd - Power Dissipation: 135 mW
View Details
6N139-500E
• Choice of CMR performance of 15 kV/μs,5 kV/μs, and 1000 V/μs• High speed: 10 MBd typical• +5 V CMOS compatibility• Pure tin leads• Guaranteed AC and DC performance overtemperature• Meets IEC 60068-2-42 (SO2) and IEC 60068-2-43 (H2S)requirements• Low input current capability of 5 mA
View Details
6N137S
The 6N135 and 6N136 are optocouplers with a GaAIAsinfrared emitting diode, optically coupled with an integratedphoto detector which consists of a photo diode and ahigh speed transistor in a DIP-8 plastic package.Signals can be transmitted between two electricallyseparated circuits up to frequencies of 2 MHz. The potentialdifference between the circuits to be coupled should notexceed the maximum permissible reference voltages.
View Details
EL6N136S
Output Type: TriacVoltage – Off State: 400VZero Crossing Circuit: NoCurrent – LED Trigger (Ift) (Max): 15mACurrent – On State (It (RMS)) (Max): 100mAVoltage – Forward (Vf) (Typ): 1.18VCurrent – DC Forward (If) (Max): 60mAMounting Type: Through HoleOperating Temperature: -55 C ~ 100C
View Details
EL3023STA
8N60 Mosfet
View Details
8N60
7N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
View Details
7N80
WG7N65 Mosfet
View Details
WG7N65

Products Categories

Have any question or need any business consultation?

Contact Us

Have any question or need any business consultation?

Contact Us
Chat with us  

Opening Hours

    Subscribe Us

    Subscribe to our newsletter!
    Reliable Semiconductor

    Social share