Description

Product details

Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 750 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 50 nC

Keywords

• Id
• Rds
• 10 A
• 50 nC
• 600 V
• Number
• 3 V Qg
• Channels
• 30 V Vgs
• N-Channel
• STW13NK60Z
• Gate Charge
• 750 mOhms Vgs
• 1 Channel Vds
• Transistor Polarity
• Gate-Source Voltage
• Drain-Source Resistance
• Continuous Drain Current
• Gate-Source Threshold Voltage
• Drain-Source Breakdown Voltage