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RELIABLESEMICONDUCTOR 6569cdac8a18ed310e5528a4 Products https://www.reliablesemiconductors.com
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 17 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
IRFZ24NPBF
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Floating channel designed for bootstrap operationFully operational to +600 VTolerant to negative transient voltagedV/dt immuneGate drive supply range from 10 to 20 VUndervoltage lockoutCMOS Schmitt-triggered inputs with pull-down
IR2117
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 95 A Rds On - Drain-Source Resistance: 4.9 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
IRFB7545PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
IRFP4768PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 171 A Rds On - Drain-Source Resistance: 4.8 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V
IRFP4568PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 290 A Rds On - Drain-Source Resistance: 2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
IRFP4468PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 104 A Rds On - Drain-Source Resistance: 9.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
IRFB4115PBF
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Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
IRFB4110PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 83 A Rds On - Drain-Source Resistance: 12 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
IRFB4321PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 57 A Rds On - Drain-Source Resistance: 23 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 86.7 nC Minimum Operating Temperature: - 55 C
IRF3710PBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 110 A Rds On - Drain-Source Resistance: 8 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 97.3 n
IRF3205PBF
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Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 23 A Rds On - Drain-Source Resistance: 117 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
IRF9540NPBF
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Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 17 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
View Details
IRFZ24NPBF
Floating channel designed for bootstrap operationFully operational to +600 VTolerant to negative transient voltagedV/dt immuneGate drive supply range from 10 to 20 VUndervoltage lockoutCMOS Schmitt-triggered inputs with pull-down
View Details
IR2117
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 95 A Rds On - Drain-Source Resistance: 4.9 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
View Details
IRFB7545PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 93 A Rds On - Drain-Source Resistance: 17.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
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IRFP4768PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 171 A Rds On - Drain-Source Resistance: 4.8 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V
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IRFP4568PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 290 A Rds On - Drain-Source Resistance: 2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
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IRFP4468PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 104 A Rds On - Drain-Source Resistance: 9.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
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IRFB4115PBF
Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
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IRFB4110PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 83 A Rds On - Drain-Source Resistance: 12 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V
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IRFB4321PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 57 A Rds On - Drain-Source Resistance: 23 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 86.7 nC Minimum Operating Temperature: - 55 C
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IRF3710PBF
Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 110 A Rds On - Drain-Source Resistance: 8 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 97.3 n
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IRF3205PBF
Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 23 A Rds On - Drain-Source Resistance: 117 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
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IRF9540NPBF

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