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• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
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• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability